Datasheet > LPM2301

LPM2301

更新时间： 2024-10-15 17:00:51

品牌	Logo	应用领域
微源半导体 - LOWPOWER		/
页数	文件大小	规格书
5页	262K
描述
SOT23

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中文翻译

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数据手册

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LPM2301 数据手册

Preliminary Datasheet

LPM2301

LPM2301 -20V/-2.6A

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features



-20V/-2.6A,R_DS(ON)=150mΩ(typ.)@VGS=-2.5V

The LPM2301 is the P-channel logic enhancement

mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

-20V/-2.6A,R_DS(ON)=120mΩ(typ.)@VGS=-4.5V

Super high density cell design for extremely low

R_DS(ON)



SOT23 Package

These devices are particularly suited for low voltage

application, notebook computer power management

and other battery powered circuits where high-side

switching.

Applications



Portable Media Players

Cellular and Smart mobile phone

LCD

DSC Sensor

Wireless Card

Ordering Information



LPM2301- □ □

□

Marking Information

F: Pb-Free

Device

Marking

A1sHB

Package

SOT23

Shipping

3K/REEL

LPM2301B3F

Package Type

B3: SOT23

Pin Configurations

(SOT-23)

TOP VIEW

LPM2301 – 02

Dec.-2019

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

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