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LPB3443LT3G PDF预览

LPB3443LT3G

更新时间: 2024-10-19 01:23:43
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 1334K
描述
20V P-Channel Enhancement-Mode MOSFET

LPB3443LT3G 数据手册

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LPB3443LT1G  
S-LPB3443LT1G  
20V P-Channel Enhancement-Mode MOSFET  
1. FEATURES  
3
VDS = -20V  
RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ  
1
RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ  
2
We declare that the material of product compliance with  
SOT23LC  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
ESD rating of class 0 (<100V)per Human Body Model  
2. APPLICATIONS  
Advanced trench process technology  
High density cell design for ultra low on-resistance.  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LPB3443LT1G  
LPB3443LT3G  
P34  
3000/Tape&Reel  
10000/Tape&Reel  
P34  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
Unit  
V
Drain–Source Voltage  
-20  
Gate–to–Source Voltage – Continuous  
Drain Current  
±12  
V
A
– Continuous TA = 25°C  
– Pulsed (Note 1)  
ID  
-4.7  
-20  
IDM  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
PD  
Limits  
1.1  
Unit  
W
Power Dissipation  
Thermal Resistance,  
RΘJA  
110  
ºC/W  
Junction–to–Ambient(Note 2)  
Junction and Storage temperature  
TJ,Tstg −55+150  
ºC  
1.Repetitive Rating: Pulse width limited by the maximum junction temperature.  
2.1-in² 2oz Cu PCB board.  
Leshan Radio Company, LTD.  
Rev.B Nov 2018  
1/5  

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