Datasheet > LPB2305LT3G

LPB2305LT3G

更新时间： 2024-10-19 01:21:35

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	1848K
描述
30V P-Channel Enhancement-Mode MOSFET

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数据手册

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LPB2305LT3G 数据手册

LPB2305LT1G

S-LPB2305LT1G

30V P-Channel Enhancement-Mode MOSFET

1. FEATURES

●

VDS = -30V

●

RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ

●

RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85mΩ

●

RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ

SOT23LC

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

2. APPLICATIONS

●

Advanced trench process technology

●

High density cell design for ultra low on-resistance.

3. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LPB2305LT1G

LPB2305LT3G

P05

3000/Tape&Reel

10000/Tape&Reel

P05

4. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Drain–Source Voltage

-30

Gate–to–Source Voltage – Continuous

Drain Current

±14

– Continuous TA = 25°C

– Pulsed (Note 1)

-4.2

-30

IDM

5. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

1.4

Unit

Power Dissipation

Thermal Resistance,

RΘJA

140

ºC/W

Junction–to–Ambient(Note 2)

Junction and Storage temperature

TJ,Tstg −55∼+150

ºC

1.Repetitive Rating: Pulse width limited by the maximum junction temperature.

2.1-in² 2oz Cu PCB board.

Leshan Radio Company, LTD.

Rev.A Nov 2016

1/5

12 3 4 5

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