LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V
LP9435LT1G
RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ
S-LP9435LT1G
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
2
SOT– 23 (TO–236AB)
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
2
D
S
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
G
1
Ordering Information
Device
Marking
Shipping
LP9435LT1G
S-LP9435LT1G
P94
3000/Tape&Reel
LP9435LT3G
S-LP9435LT3G
10000/Tape&Reel
P94
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
VDS
Parameter
Limit
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
VGS
ID
± 20
-5.3
A
Pulsed Drain Current 1)
IDM
-20
TA = 25oC
TA = 75oC
1.4
PD
Maximum Power Dissipation
W
0.8
oC
TJ, Tstg
RθJC
Operating Junction and Storage Temperature Range
-55 to 150
50
Junction-to-Case Thermal Resistance
oC/W
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
RθJA
90
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .O 1/4