Datasheet > LP722

LP722

更新时间： 2024-11-28 22:31:07

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	38K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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中文翻译

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技术参数
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LP722 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	15 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	150 W
子类别：	FET General Purpose Power

LP722 数据手册

polyfet rf devices

LP722

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

35.0 Watts Single Ended

Package Style AP

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

C/W

15.0

150 Watts

200 C

-65 C to 150 C

50V

20 V

1.00

RF CHARACTERISTICS (

35.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.40 A, Vds = 12.5 V, F = 500

Gps

Common Source Power Gain

Drain Efficiency

MHz

Idq =

0.40

A, Vds = 12.5 V, F = 500 MHz

Idq = 0.40

A, Vds = 12.5 V, F = 500

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.40 mA, Vgs = 0V

Vds =

Bvdss

Idss

4.0

Zero Bias Drain Current

Gate Leakage Current

12.5 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.40 A, Vgs = Vds

3.4

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids =12.00 A

0.30

26.00

100.0

4.0

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

12.5 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

12.5 Vgs = 0V, F = 1 MHz

80.0

REVISION 04/30/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

中文翻译

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