Datasheet > LP701

LP701

更新时间： 2024-11-28 22:31:07

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	38K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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LP701 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.59	Base Number Matches：	1

LP701 数据手册

polyfet rf devices

LP701

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

35.0 Watts Single Ended

Package Style AP

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

C/W

4.5

80 Watts

200 C

-65 C to 150 C

70V

20 V

1.80

RF CHARACTERISTICS (

35.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.40 A, Vds = 28.0 V, F = 500

Gps

Common Source Power Gain

Drain Efficiency

MHz

Idq =

0.40

A, Vds = 28.0 V, F = 500 MHz

Idq = 0.40

A, Vds = 28.0 V, F = 500

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.20 mA, Vgs = 0V

Vds =

Bvdss

Idss

2.0

Zero Bias Drain Current

Gate Leakage Current

28.0 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.20 A, Vgs = Vds

1.6

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 8.00 A

0.65

10.00

60.0

1.6

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

28.0 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

28.0 Vgs = 0V, F = 1 MHz

30.0

REVISION 04/27/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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与LP701相关器件

型号	品牌	获取价格	描述	数据表
LP702	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP721	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP722	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
LP731J	KOA	获取价格	thin film resistance thermal chip sensors
LP731JTBK103G3600	KOA	获取价格	RTD Platinum Sensor, 10000ohm, Rectangular, Surface Mount, 1.60 X 0.80 MM, 0.50 HEIGHT, RO
LP731JTBK103J3600	KOA	获取价格	RTD Platinum Sensor, 10000ohm, Rectangular, Surface Mount, 1.60 X 0.80 MM, 0.50 HEIGHT, RO
LP731JTTE101F3000	KOA	获取价格	RTD Platinum Sensor, Rectangular, Surface Mount, SMD-2
LP731JTTE101G4500	KOA	获取价格	RTD Platinum Sensor, Rectangular, Surface Mount, SMD-2
LP731JTTE101G5000	KOA	获取价格	RTD Platinum Sensor, Rectangular, Surface Mount, SMD-2
LP731JTTE101J3000	KOA	获取价格	RTD Platinum Sensor, Rectangular, Surface Mount, SMD-2

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