Datasheet > LP6836P100

LP6836P100

更新时间： 2024-11-06 22:46:59

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
2页	26K
描述
Packaged 0.25W Power PHEMT

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中文翻译

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数据手册

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LP6836P100 数据手册

Filtronic

Solid State

LP6836P100

Packaged 0.25W Power PHEMT

FEATURES

GATE

•

+24.5 dBm Typical Power at 15 GHz

•

12 dB Typical Power Gain at 15 GHz

•

Low Intermodulation Distortion

•

55% Power-Added-Efficiency

•

Color-coded by I_DSSrange

SOURCE

DRAIN

DESCRIPTION AND APPLICATIONS

The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic

High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 360 m Schottky barrier

gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si₃N₄

passivation and is available in die form, or P70 packages. Packages are color-coded by I_DSSrange.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink

transmitters, and medium-haul digital radio transmitters.

The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot

screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.

PERFORMANCE SPECIFICATIONS (T_A= 25°C)

SYMBOLS

PARAMETERS

MIN

TYP

MAX UNITS

I_DSS

Saturated Drain-Source Current

V_DS= 2V V_GS= 0V

LP6836-P100-1 Blue

LP6836-P100-2 Green

LP6836-P100-3 Red

106

100

115

105

125

P_1dB

G_1dB

Output Power at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

Power Gain at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

= 15 GHz

23.5

8.5

24.5

dBm

9.5

Power-Added Efficiency

η_ADD

I_MAX

G_M

Maximum Drain-Source Current

Transconductance

V_DS= 2V V_GS= +1V

190

V_DS= 2V V_GS= 0V

V_DS= 2V I_DS= 2mA

V_GS= -5V

V_P

Pinch-Off Voltage

-0.25

-0.8

-1.5

I_GSO

BV_GS

BV_GD

Gate-Source Leakage Current

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

I_GS= 2mA

-11

-12

-15

-16

I_GD= 2mA

Get Package Model

DSS-031 WF

Phone:

Internet: http://www.filtronicsolidstate.com

Fax:

(408) 970-9950

(408) 988-1845

中文翻译

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