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LP4101LT1G PDF预览

LP4101LT1G

更新时间: 2024-10-29 01:11:07
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 1035K
描述
20V P-Channel Enhancement-Mode MOSFET

LP4101LT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
20V P-Channel Enhancement-Mode MOSFET  
VDS= -20V  
LP4101LT1G  
S-LP4101LT1G  
R
R
DS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ  
mΩ  
DS(ON), Vgs@-2.5V, Ids@-2.0A = 150  
Features  
3
Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
Fully Characterized Avalanche Voltage and Current  
1
Improved Shoot-Through FOM  
2
we declare that the material of product  
SOT– 23 (TO–236AB)  
compliance with RoHS reuirements.  
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
3
D
Simple Drive Requirement  
Small Package Outline  
Surface Mount Device  
G
1
S
2
Ordering Information  
Device  
Marking  
Shipping  
LP4101LT1G  
S-LP4101LT1G  
P41  
3000/Tape & Reel  
LP4101LT3G  
S-LP4101LT3G  
P41  
10,000/Tape & Reel  
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-20  
± 8  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current 1)  
VGS  
ID  
-2.3  
-8  
A
IDM  
TA = 25oC  
TA = 75oC  
0.9  
PD  
Maximum Power Dissipation  
W
0.57  
Operating Junction and Storage Temperature Range  
Junction-to-Case Thermal Resistance  
TJ, Tstg  
RqJC  
-55 to 150  
oC  
oC/W  
2)  
Junction-to-Ambient Thermal Resistance (PCB mounted)  
RqJA  
140  
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation  
2. 1-in2 2oz Cu PCB board  
3. Guaranteed by design; not subject to production testing  
Rev .O 1/5  

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