生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | VSSOP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.78 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.02 µA |
25C 时的最大偏置电流 (IIB): | 0.01 µA | 标称共模抑制比: | 90 dB |
频率补偿: | YES | 最大输入失调电压: | 9000 µV |
JESD-30 代码: | S-PDSO-G8 | 长度: | 3 mm |
低-失调: | NO | 负供电电压上限: | -16 V |
标称负供电电压 (Vsup): | 功能数量: | 2 | |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | TSSOP | 封装等效代码: | TSSOP8,.19 |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
包装方法: | TAPE AND REEL | 电源: | +-1.5/+-16/3/32 V |
认证状态: | Not Qualified | 座面最大高度: | 1.07 mm |
标称压摆率: | 50 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.25 mA | 供电电压上限: | 16 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | BIPOLAR | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 最小电压增益: | 40000 |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LP358DGKT | TI |
获取价格 |
ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS | |
LP358DR | TI |
获取价格 |
ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS | |
LP358DRE4 | TI |
获取价格 |
ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS | |
LP358DRG4 | TI |
获取价格 |
ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS | |
LP359F15IKT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 35.9MHz Nom, | |
LP359F31CST | CTS |
获取价格 |
Series - Fundamental Quartz Crystal, 35.9MHz Nom, | |
LP359F3XIAT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 35.9MHz Nom, | |
LP359FY5IDT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 35.9MHz Nom, | |
LP35AFY3IKT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 35.021MHz Nom, | |
LP35CF23IAT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 35.28MHz Nom, |