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LP3415ELT3G PDF预览

LP3415ELT3G

更新时间: 2024-11-20 01:22:15
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 318K
描述
20V P-Channel Enhancement-Mode MOSFET

LP3415ELT3G 数据手册

 浏览型号LP3415ELT3G的Datasheet PDF文件第2页浏览型号LP3415ELT3G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
20V P-Channel Enhancement-Mode MOSFET  
LP3415ELT1G  
S-LP3415ELT1G  
VDS= -20V  
R
R
DS(ON), Vgs@-4.5V, Ids@-4A = 60mΩ  
mΩ  
mΩ  
DS(ON), Vgs@-2.5V, Ids@-4A = 75  
3
RDS(ON), Vgs@-1.8V, Ids@-2A = 85  
Features  
Advanced trench process technology  
1
High Density Cell Design For Ultra Low On-Resistance  
2
we declare that the material of product  
SOT– 23 (TO–236AB)  
compliance with RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements;AEC-Q101  
Qualified and PPAP Capable.  
Simple Drive Requirement  
Small Package Outline  
Surface Mount Device  
Ordering Information  
Device  
Shipping  
Marking  
LP3415ELT1G  
S-LP3415ELT1G  
3000/Tape&Reel  
P15  
LP3415ELT3G  
S-LP3415ELT3G  
10000/Tape&Reel  
P15  
o
Maximum Ratings and Thermal Characteristics (T = 25 C unless otherwise noted)  
A
Parameter  
Symbol  
VDS  
Limit  
-20  
±8  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current 1)  
VGS  
ID  
-4  
A
IDM  
-30  
TA = 25oC  
TA = 75oC  
1
PD  
Maximum Power Dissipation  
W
0.6  
Operating Junction and Storage Temperature Range  
Junction-to-Case Thermal Resistance  
TJ, Tstg  
RqJC  
-55 to 150  
oC  
100  
150  
oC/W  
2)  
Junction-to-Ambient Thermal Resistance (PCB mounted)  
RqJA  
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation  
2. 1-in2 2oz Cu PCB board  
3. Guaranteed by design; not subject to production testing  
Rev .A 1/3  

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