Datasheet > LP3415ELT3G

LP3415ELT3G

更新时间： 2024-02-23 18:50:53

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	318K
描述
20V P-Channel Enhancement-Mode MOSFET

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数据手册

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LP3415ELT3G 数据手册

LESHAN RADIO COMPANY, LTD.

20V P-Channel Enhancement-Mode MOSFET

LP3415ELT1G

S-LP3415ELT1G

V_DS= -20V

_DS(ON),Vgs@-4.5V, Ids@-4A = 60mΩ

mΩ

_DS(ON),Vgs@-2.5V, Ids@-4A = 75

R_DS(ON),Vgs@-1.8V, Ids@-2A = 85

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

we declare that the material of product

SOT– 23 (TO–236AB)

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements;AEC-Q101

Qualified and PPAP Capable.

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Shipping

Marking

LP3415ELT1G

S-LP3415ELT1G

3000/Tape&Reel

P15

LP3415ELT3G

S-LP3415ELT3G

10000/Tape&Reel

P15

Maximum Ratings and Thermal Characteristics (T = 25 C unless otherwise noted)

Parameter

Symbol

V_DS

Limit

-20

±8

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current 1)

V_GS

I_D

-4

I_DM

-30

TA = 25^oC

TA = 75^oC

P_D

Maximum Power Dissipation

0.6

Operating Junction and Storage Temperature Range

Junction-to-Case Thermal Resistance

T_J, T_stg

R_qJC

-55 to 150

^oC

100

150

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted)

R_qJA

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

Rev .A 1/3

12 3

中文翻译

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