Datasheet > LP2301ALT1G

LP2301ALT1G

更新时间： 2024-11-30 01:23:43

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	558K
描述
20V P-Channel Enhancement-Mode MOSFET

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LP2301ALT1G 数据手册

LP2301ALT1G

S-LP2301ALT1G

20V P-Channel Enhancement-Mode MOSFET

1. FEATURES

●

VDS =-20V

●

RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ

●

RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ

●

We declare that the material of product compliance with

SOT23(TO-236)

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

2. APPLICATIONS

●

Power management in note book

●

Portable equipment

●

Battery powered system

●

Load switch

●

DSC

3. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LP2301ALT1G

LP2301ALT3G

01A

3000/Tape&Reel

10000/Tape&Reel

01A

4. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Drain–Source Voltage

-20

±8

Gate–to–Source Voltage – Continuous

Drain Current(Note 1)

– Continuous TA = 25°C

– Pulsed

-2

IDM

-10

5. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

0.7

Unit

Maximum Power Dissipation

Thermal Resistance,

RΘJA

175

ºC/W

Junction–to–Ambient(Note 1)

Junction and Storage temperature

TJ,Tstg −55∼+150

ºC

1. The device mounted on 1in² FR5 board with 2 oz copper.

Leshan Radio Company, LTD.

Rev.C Sep. 2018

1/5

12 3 4 5

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