LP2301ALT1G
S-LP2301ALT1G
20V P-Channel Enhancement-Mode MOSFET
1. FEATURES
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VDS =-20V
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RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ
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RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ
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We declare that the material of product compliance with
SOT23(TO-236)
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
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Power management in note book
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Portable equipment
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Battery powered system
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Load switch
●
DSC
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LP2301ALT1G
LP2301ALT3G
01A
3000/Tape&Reel
10000/Tape&Reel
01A
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VDSS
VGS
Limits
Unit
V
Drain–Source Voltage
-20
±8
Gate–to–Source Voltage – Continuous
Drain Current(Note 1)
V
A
– Continuous TA = 25°C
– Pulsed
ID
-2
IDM
-10
5. THERMAL CHARACTERISTICS
Parameter
Symbol
PD
Limits
0.7
Unit
W
Maximum Power Dissipation
Thermal Resistance,
RΘJA
175
ºC/W
Junction–to–Ambient(Note 1)
Junction and Storage temperature
TJ,Tstg −55∼+150
ºC
1. The device mounted on 1in² FR5 board with 2 oz copper.
Leshan Radio Company, LTD.
Rev.C Sep. 2018
1/5