Datasheet > LO4459PT1G

LO4459PT1G

更新时间： 2024-10-29 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	372K
描述
Channel Enhancement Mode Field Effect Transistor

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LO4459PT1G 数据手册

LESHAN RADIO COMPANY, LTD.

LO4459PT1G

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The LO4459PT1G uses advanced trench technology to provide V_DS(V) = -30V

excellent R_DS(ON)with low gate charge. This device is suitable

I_D= -6.5A

for use as a load switch or in PWM applications.

LO4459PT1G is a Green Product ordering option.

R_DS(ON)< 46mΩ (V_GS= -10V)

_DS(ON)< 72mΩ (V_GS= -4.5V)

SOP-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Maximum

-30

Units

Symbol

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±20

_A=25°C

-6.5

-5.3

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

3.1

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Lead ^C

R_θJL

Rev .O 1/4

12 3 4

中文翻译

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