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LNTR4003NLT1G PDF预览

LNTR4003NLT1G

更新时间: 2024-10-29 01:23:27
品牌 Logo 应用领域
乐山 - LRC
页数 文件大小 规格书
5页 447K
描述
30 V, 0.56 A, Single, N−Channel,Gate ESD Protection, SOT-23

LNTR4003NLT1G 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.62
Is Samacsys:N峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

LNTR4003NLT1G 数据手册

 浏览型号LNTR4003NLT1G的Datasheet PDF文件第2页浏览型号LNTR4003NLT1G的Datasheet PDF文件第3页浏览型号LNTR4003NLT1G的Datasheet PDF文件第4页浏览型号LNTR4003NLT1G的Datasheet PDF文件第5页 
LNTR4003NLT1G  
S-LNTR4003NLT1G  
30 V, 0.56 A, Single, N−Channel,  
Gate ESD Protection, SOT-23  
1. FEATURES  
Low gate voltage threshold(VGS(th))to facilitate drive circuit design  
Low gate charge for fast switching  
ESD protected gate  
Minimum breakdown voltage rating of 30 V  
SOT23(TO-236)  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
2. APPLICATIONS  
Level shifters  
Level switches  
Low side load switches  
Portable applications  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LNTR4003NLT1G  
LNTR4003NLT3G  
TR8  
3000/Tape&Reel  
10000/Tape&Reel  
TR8  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
30  
Unit  
V
Drain–Source Voltage  
Gate–to–Source Voltage – Continuous  
±20  
0.5  
V
TA = 25°C  
TA = 85°C  
TA = 25°C  
TA = 85°C  
ID  
A
Current (Note 1)  
Steady State  
0.37  
0.56  
0.4  
Continuous Drain  
Current (Note 1) t<10s  
Pulsed Drain Current(tp=10μs)  
Continuous Source Current (Body Diode)  
Maximum Power Dissipation(Note 1)  
Steady State  
IDM  
IS  
1.7  
A
A
1
PD  
W
0.69  
0.83  
t<5s  
Junction and Storage temperature  
Maximum Temperature for Soldering  
Purposes  
TJ,Tstg  
TL  
−55+150  
ºC  
ºC  
260  
Leshan Radio Company, LTD.  
Rev.B Mar 2016  
1/5  

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