5秒后页面跳转
LNTK3043PT5G PDF预览

LNTK3043PT5G

更新时间: 2022-02-26 12:48:37
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 235K
描述
20 V, 285 mA, P−Channel with ESD Protection, SOT−723

LNTK3043PT5G 数据手册

 浏览型号LNTK3043PT5G的Datasheet PDF文件第2页浏览型号LNTK3043PT5G的Datasheet PDF文件第3页浏览型号LNTK3043PT5G的Datasheet PDF文件第4页浏览型号LNTK3043PT5G的Datasheet PDF文件第5页 
LESHAN RADIO COMPANY, LTD.  
Power MOSFET  
20 V, 285 mA, P−Channel with ESD  
Protection, SOT−723  
LNTK3043PT5G  
Features  
S-LNTK3043PT5G  
Enables High Density PCB Manufacturing  
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89  
Low Voltage Drive Makes this Device Ideal for Portable Equipment  
V
R
DS(on)  
TYP  
I Max  
D
(BR)DSS  
1.5 W @ 4.5 V  
Low Threshold Levels, V  
< 1.3 V  
GS(TH)  
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin  
Environments such as Portable Electronics  
2.4 W @ 2.5 V  
5.1 W @ 1.8 V  
6.8 W @ 1.65 V  
285 mA  
20 V  
Operated at Standard Logic Level Gate Drive, Facilitating Future  
Migration to Lower Levels Using the Same Basic Topology  
These are Pb−Free Devices  
Top View  
3
S- Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC-Q101 Qualified and  
PPAP Capable.  
Applications  
Interfacing, Switching  
High Speed Switching  
Cellular Phones, PDAs  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
20  
Unit  
V
1
2
V
DSS  
1 − Gate  
2 − Source  
3 − Drain  
Gate−to−Source Voltage  
V
10  
V
GS  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
= 25°C  
= 85°C  
= 25°C  
255  
185  
285  
440  
A
T
A
I
mA  
D
t v 5 s  
T
A
MARKING  
DIAGRAM  
Power Dissipation  
(Note 1)  
Steady  
State  
T
A
= 25°C  
P
mW  
D
D
t v 5 s  
545  
210  
155  
310  
KB  
1
Continuous Drain  
Current (Note 2)  
T
A
= 25°C  
= 85°C  
= 25°C  
I
D
SOT−723  
CASE 631AA  
mA  
T
A
Steady  
State  
Power Dissipation  
(Note 2)  
T
A
P
mW  
KB = Device Code  
= Date Code  
M
Pulsed Drain Current  
I
400  
mA  
t
= 10 ms  
p
DM  
Operating Junction and Storage Temperature T , T  
−55 to  
150  
°C  
J
STG  
ORDERING INFORMATION  
Source Current (Body Diode) (Note 2)  
I
286  
260  
mA  
S
Device  
Package  
Shipping  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 seconds)  
°C  
LNTK3043PT5G  
S-LNTK3043PT5G  
T
L
SOT−723* 8000 / Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in sq pad size  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
*These packages are inherently Pb−Free.  
(Cu area = 1.127 in sq [1 oz] including traces)  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
Rev .O 1/5  
 

与LNTK3043PT5G相关器件

型号 品牌 描述 获取价格 数据表
LNTK3043PT5G_15 LRC Power MOSFET

获取价格

LNTR4003NLT1G LRC 30 V, 0.56 A, Single, N−Channel,Gate ESD Pr

获取价格

LNTR4003NLT3G LRC 30 V, 0.56 A, Single, N−Channel,Gate ESD Pr

获取价格

LNTS4409NWT1G LRC Small Signal MOSFET 25 V, 0.75 A, Single, Nâˆ

获取价格

LNU-12C PAIRUI Constant current LED Drivers

获取价格

LNU12-C240 PAIRUI Constant current LED Drivers

获取价格