Datasheet > LNA4801L

LNA4801L

更新时间： 2024-11-26 22:29:11

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
2页	38K
描述
GaAlAs Infrared Light Emitting Diode

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LNA4801L 数据手册

Infrared Light Emitting Diodes

LNA4801L

GaAlAs Infrared Light Emitting Diode

Unit : mm

ø3.8±0.2

ø3.0±0.2

For optical control systems

Features

Fast response and high-speed modulation capability :

f_C= 20 MHz (typ.)

Wide directivity : θ = 22 deg. (typ.)

Transparent epoxy resin package

2-0.8 max.

2-0.5±0.1

0.5±0.1

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

1: Anode

2: Cathode

Power dissipation

P_D

I_F

190

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

100

I_FP

V_R

T_opr

T_stg

–25 to +85

–30 to +100

˚C

f = 100Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Center radiant intensity

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Half-power angle

Symbol

Conditions

min

typ

max

Unit

mW/sr

I_e

λ_P

∆λ

V_F

I_R

I_F= 50mA

860

I_F= 50mA

I_F= 100mA

1.6

1.9

V_R= 3V

µA

The angle in which radiant intencity is 50%

I_FP= 50mA + 10mA_p-p

deg.

MHz

Cutoff frequency

f_C

P_O(f_CMHz)

P_O(1MHz)

^*Frequency when modulation optical power decreases by 3dB from 1MHz

10 log

(

= – 3

)

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