Datasheet > LN4812LT1G

LN4812LT1G

更新时间： 2024-10-20 01:20:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	670K
描述
30V N-Channel Enhancement-Mode MOSFET

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LN4812LT1G 数据手册

LN4812LT1G

S-LN4812LT1G

30V N-Channel Enhancement-Mode MOSFET

1. FEATURES

●

VDS= 30V

●

RDS(ON), VGS@4.5V, IDS@5A = 52mΩ

●

RDS(ON), VGS@10V, IDS@6A = 38mΩ

●

We declare that the material of product compliance with

SOT23(TO-236)

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

2. APPLICATIONS

●

High density cell design for ultra low on-resistance

●

Advanced trench process technology

●

High power and current handling capability

3. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LN4812LT1G

LN4812LT3G

N48

3000/Tape&Reel

10000/Tape&Reel

N48

4. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Drain–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

±20

– Continuous TA = 25°C

– Pulsed(Note 1)

IDM

5. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

1.4

Unit

Maximum Power Dissipation

Thermal Resistance,

RΘJA

ºC/W

Junction–to–Ambient(Note 2)

Junction and Storage temperature

TJ,Tstg −55∼+150

ºC

1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.

2. 1-in² 2oz Cu PCB board.

Leshan Radio Company, LTD.

Rev.E Oct. 2018

1/5

12 3 4 5

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