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LN4501LT3G PDF预览

LN4501LT3G

更新时间: 2024-10-20 01:11:47
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 305K
描述
Power MOSFET

LN4501LT3G 数据手册

 浏览型号LN4501LT3G的Datasheet PDF文件第2页浏览型号LN4501LT3G的Datasheet PDF文件第3页浏览型号LN4501LT3G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
Power MOSFET  
20 V, 3.2 A, Single N−Channel, SOT−23  
LN4501LT1G  
Features  
S-LN4501LT1G  
Leading Planar Technology for Low Gate Charge / Fast Switching  
2.5 V Rated for Low Voltage Gate Drive  
SOT−23 Surface Mount for Small Footprint  
Pb−Free Package is Available  
S- Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC-Q101 Qualified and  
PPAP Capable.  
3
1
2
SOT– 23 (TO–236AB)  
Applications  
Load/Power Switch for Portables  
Load/Power Switch for Computing  
DC−DC Conversion  
N−Channel  
V
R
TYP  
I MAX  
D
(Note 1)  
(BR)DSS  
DS(on)  
D
70 mW @ 4.5 V  
85 mW @ 2.5 V  
3.6 A  
20 V  
3.1 A  
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
S
V
20  
±12  
3.2  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
A
A
D
T = 85°C  
A
2.4  
A
ORDERING INFORMATION  
Steady State Power  
Dissipation (Note 1)  
Steady State  
P
1.25  
W
D
Device  
Package  
N45  
Shipping†  
Pulsed Drain Current  
t = 10 ms  
p
I
10.0  
A
DM  
LN4501LT1G  
S-LN4501LT1G  
3000 / Tape & Reel  
10000 / Tape & Reel  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
stg  
LN4501LT3G  
S-LN4501LT3G  
T
N45  
Continuous Source Current (Body Diode)  
I
1.6  
A
S
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction−to−Ambient (Note 1)  
Junction−to−Ambient (Note 2)  
Symbol  
Max  
100  
300  
Unit  
°C/W  
R
q
JA  
JA  
R
q
1. Surface−mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
Rev .O 1/4  
 

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