LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
LN4501LT1G
Features
S-LN4501LT1G
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• Pb−Free Package is Available
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
3
1
2
SOT– 23 (TO–236AB)
Applications
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
N−Channel
V
R
TYP
I MAX
D
(Note 1)
(BR)DSS
DS(on)
D
70 mW @ 4.5 V
85 mW @ 2.5 V
3.6 A
20 V
3.1 A
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
S
V
20
±12
3.2
V
V
DSS
Gate−to−Source Voltage
V
GS
Continuous Drain
Current (Note 1)
Steady T = 25°C
State
I
A
A
D
T = 85°C
A
2.4
A
ORDERING INFORMATION
Steady State Power
Dissipation (Note 1)
Steady State
P
1.25
W
D
Device
Package
N45
Shipping†
Pulsed Drain Current
t = 10 ms
p
I
10.0
A
DM
LN4501LT1G
S-LN4501LT1G
3000 / Tape & Reel
10000 / Tape & Reel
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
stg
LN4501LT3G
S-LN4501LT3G
T
N45
Continuous Source Current (Body Diode)
I
1.6
A
S
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Symbol
Max
100
300
Unit
°C/W
R
q
JA
JA
R
q
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Rev .O 1/4