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LN2306LT1G PDF预览

LN2306LT1G

更新时间: 2024-11-13 01:20:07
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 456K
描述
30V N-Channel Enhancement-Mode MOSFET

LN2306LT1G 数据手册

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LN2306LT1G  
S-LN2306LT1G  
30V N-Channel Enhancement-Mode MOSFET  
1. FEATURES  
VDS= 30V  
RDS(ON), VGS@10V, IDS@5.8A = 38mΩ  
RDS(ON), VGS@4.5V, IDS@5.0A = 43mΩ  
RDS(ON), VGS@2.5V, IDS@4.0A = 62mΩ  
SOT23(TO-236)  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
2. APPLICATIONS  
Advanced trench process technology  
High density cell design for ultra low on-resistance  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LN2306LT1G  
LN2306LT3G  
N06  
3000/Tape&Reel  
10000/Tape&Reel  
N06  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
Unit  
V
Drain–Source Voltage  
30  
Gate–to–Source Voltage – Continuous  
Drain Current  
±12  
V
A
– Continuous TA = 25°C  
– Pulsed(Note 1)  
ID  
5.8  
30  
IDM  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
PD  
Limits  
1.4  
Unit  
W
Maximum Power Dissipation  
Thermal Resistance,  
RΘJA  
140  
ºC/W  
Junction–to–Ambient(Note 2)  
Junction and Storage temperature  
TJ,Tstg −55+150  
ºC  
1. Repetitive Rating: Pulse width limited by the Maximum junction temperation.  
2. 1-in² 2oz Cu PCB board.  
Leshan Radio Company, LTD.  
Rev.C Mar 2016  
1/5  

LN2306LT1G 替代型号

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1.0 mm X 4.0 mm Series