Datasheet > LN2302LT1G_11

LN2302LT1G_11

更新时间： 2024-09-24 12:01:31

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	1103K
描述
20V N-Channel Enhancement-Mode MOSFET

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中文翻译

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数据手册

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LN2302LT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

20V N-Channel Enhancement-Mode MOSFET

LN2302LT1G

V^DS= 20V

R^DS(ON),Vgs@4.5V, Ids@2.8A = 60m

R^DS(ON),Vgs@2.5V, Ids@2.0A = 115m

Features

SOT– 23 (TO–236AB)

High Density Cell Design For Ultra Low On-Resistance

Improved Shoot-Through FOM

we declare that the material of product

compliance with RoHS reuirements.

▼ High Density Cell Design For Ultra Low On - Resistance

Improved Shoot-Through FOM

Ordering Information

Device

Marking

Shipping

3000/Tape & Reel

LN2302LT1G

N02

LN2302LT3G

N02

10,000/Tape & Reel

Maximum Ratings and Thermal Characteristics ^(T_A^{= 25}^o^{C unless otherwise noted)}

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

I_D

± 8

2.3

Pulsed Drain Current

I_DM

TA = 25^oC

TA = 75^oC

0.9

P_D

Maximum Power Dissipation

0.57

^oC

Operating Junction and Storage Temperature Range

Junction-to-Case Thermal Resistance

T_J, T_stg

R_qJC

-55 to 150

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

R_qJA

145

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

Rev .A 1/5

12 3 4 5

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