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LMVL3401T1G PDF预览

LMVL3401T1G

更新时间: 2024-11-30 11:37:43
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 178K
描述
Silicon Pin Diode

LMVL3401T1G 数据手册

 浏览型号LMVL3401T1G的Datasheet PDF文件第2页浏览型号LMVL3401T1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Silicon Pin Diode  
LMVL3401T1  
This device is designed primarily for VHF band switching applications but is also  
suitable for use in general–purpose switching circuits. Supplied in a Surface Mount  
package.  
SILICONPIN  
SWITCHINGDIODE  
• Rugged PIN Structure Coupled with Wirebond Construction  
for Optimum Reliability  
1
• Low Capacitance – 0.7 pF Typ at VR = 20 Vdc  
• Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ)  
@ IF = 10 mAdc  
2
• Pb-Free package is available  
SOD– 323  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
1
2
LMVL3401T1  
4D  
SOD-323  
3000/Tape&Reel  
CATHODE  
ANODE  
SOD-323  
(Pb-Free)  
LMVL3401T1G  
4D  
3000/Tape&Reel  
MAXIMUMRATINGS  
Symbol  
Rating  
Value  
Unit  
Vdc  
VR  
IF  
Continuous Reverse Voltage  
Peak Forward Current  
20  
20  
mAdc  
THERMALCHARACTERISTICS  
Symbol  
Characteristic  
Max  
Unit  
PD  
Total Device Dissipation FR–5 Board,*  
TA = 25°C  
200  
mW  
Derate above 25°C  
1.57  
635  
150  
mW/°C  
°C/W  
°C  
RθJA  
TJ,Tstg  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
*FR–4 Minimum Pad  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Characteristic  
Reverse BreakdownVoltage  
(IR = 10 µAdc)  
Symbol  
Min  
Typ  
Max  
Unit  
V(BR)R  
35  
Vdc  
Diode Capacitance  
(VR = 20 Vdc)  
CT  
RS  
IR  
1.0  
0.7  
0.1  
pF  
Series Resistance  
(IF = 10 mAdc, f =100MHz)  
Reverse Leakage Current  
(VR = 25 Vdc)  
µAdc  
LMVL3401T1-1/3  

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