LMV601, LMV602, LMV604
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SNOSC70B –APRIL 2012–REVISED MARCH 2013
LMV601/LMV602/LMV604 1 MHz, Low Power General Purpose, 2.7V Operational Amplifiers
Check for Samples: LMV601, LMV602, LMV604
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FEATURES
DESCRIPTION
The LMV601/LMV602/LMV604 are single, dual, and
quad low voltage, low power Operational Amplifiers.
They are designed specifically for low voltage general
purpose applications. Other important product
characteristics are low input bias current, rail-to-rail
output, and wide temperature range. The
LMV601/LMV602/LMV604 have 29nV Voltage Noise
at 10KHz, 1MHz GBW, 1.0V/μs Slew Rate, 0.25mV
Vos. The LMV601/2/4 operates from a single supply
voltage as low as 2.7V, while drawing 100uA (typ)
quiescent current. In shutdown mode the current can
be reduced to 45pA.
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(Typical 2.7V Supply Values; Unless Otherwise
Noted)
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Ensured 2.7V and 5V Specifications
Supply Current (Per Amplifier) 100μA
Gain Bandwidth Product 1.0MHz
Shutdown Current (LMV601) 45pA
Turn-On Time from Shutdown (LMV601) 5μs
Input Bias Current 20fA
APPLICATIONS
The industrial-plus temperature range of −40°C to
125°C allows the LMV601/LMV602/LMV604 to
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Cordless/Cellular Phones
Laptops
accommodate
a
broad range of extended
PDAs
environment applications.
PCMCIA/Audio
The LMV601 offers a shutdown pin that can be used
to disable the device. Once in shutdown mode, the
supply current is reduced to 45pA (typical).
Portable/Battery-Powered Electronic
Equipment
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Supply Current Monitoring
The LMV601 is offered in the tiny 6-Pin SC70
package, the LMV602 in space saving 8-Pin VSSOP
and SOIC, and the LMV604 in 14-Pin TSSOP and
SOIC. These small package amplifiers offer an ideal
solution for applications requiring minimum PCB
footprint. Applications with area constrained PC board
requirements include portable and battery operated
electronics.
Battery Monitoring
Buffer
Filter
Driver
Sample and Hold Circuit
+
V
+
V
-
-
V
OUT
+
V
IN
+
C = 200pF
SAMPL
E
CLOCK
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012–2013, Texas Instruments Incorporated