Datasheet > LMUN5332DW1T1G_15

LMUN5332DW1T1G_15

更新时间： 2024-09-17 00:55:19

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Dual Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

LMUN5311DW1T1G

Series

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

LMUN5311DW1T1G series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

SOT-363/SC-88

• Reduces Board Space

• Reduces Component Count

• We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1

and Q 2 , – minus sign for Q 1 (PNP) omitted)

R₁

R₂

Rating

Symbol Value

Unit

Vdc

Q₂

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

R _θJA

xx = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/29

12 3 4 5 6 7...29

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与LMUN5332DW1T1G_15相关器件

型号	品牌	获取价格	描述	数据表
LMUN5333DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5333DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5333DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5334DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5334DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5334DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5335DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5335DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUPY201209T-101Y-N	LEIDITECH	获取价格	This specification applies to MULTILAYER FERRITE CHIP BEADS
LMUPY201209T-121Y-N	LEIDITECH	获取价格	This specification applies to MULTILAYER FERRITE CHIP BEADS

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