Datasheet > LMUN5237DW1T1G_15

LMUN5237DW1T1G_15

更新时间： 2024-09-17 01:17:31

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Dual Bias ResistorTransistors

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LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

LMUN5211DW1T1G

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

SC-88/SOT-363

• Reduces Component Count

• We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₁

R₂

Q₂

Rating

Symbol Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

R _θJA

7X = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/10

12 3 4 5 6 7...10

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与LMUN5237DW1T1G_15相关器件

型号	品牌	获取价格	描述	数据表
LMUN5237T1	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5237T1G	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5237T3G	LEIDITECH	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5241T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5241T1G_15	LRC	获取价格	Bias Resistor Transistor
LMUN5311DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5311DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5312DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5312DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith
LMUN5313DW1T1	LRC	获取价格	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolith

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