Datasheet > LMUN5234T1G

LMUN5234T1G

更新时间： 2024-01-01 19:29:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
10页	131K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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LMUN5234T1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.31 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5234T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

LMUN5211T1

SERIES

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network con-

sisting of two resistors; a series base resistor and a base–emitter resistor.

The BRT eliminates these individual components by integrating them into a

single device. The use of a BRT can reduce both system cost and board

space. The device is housed in the SC–70/SOT–323 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC-70 / SOT-323

PIN 3

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

• Reduces Board Space

• Reduces Component Count

• The SC–70/SOT–323 package can be soldered using wave or

reflow. The modified gull–winged leads absorb thermal stress

during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

MARKINGDIAGRAM

Use the Device Number to order the 7 inch/3000 unit reel.

• Pb-Free package is available

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2

of this data sheet.

8x = Specific Device Code

x = (See Marking Table)

M= Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

P_D

202 (Note 1.)

310 (Note 2.)

1.6 (Note 1.)

2.5 (Note 2.)

T = 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

R_θJA

R_θJL

618 (Note 1.)

403 (Note 2.)

Thermal Resistance –

Junction-to-Lead

280 (Note 1.)

332 (Note 2.)

Junction and Storage

Temperature Range

T_J,T_stg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5211T1 Series–1/10

12 3 4 5 6 7...10

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LMUN5235T1G	LRC	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto	获取价格

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