Datasheet > LMUN5232DW1T1

LMUN5232DW1T1

更新时间： 2024-11-05 11:37:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
10页	168K
描述
Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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LMUN5232DW1T1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	15
元件数量：	2	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.385 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5232DW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

LMUN5211DW1T1

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

SC-88/SOT-363

• Reduces Component Count

• Pb-Free Package is available

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₁

R₂

Q₂

Rating

Symbol Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

R _θJA

7X = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5211DW–1/10

12 3 4 5 6 7...10

中文翻译

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与LMUN5232DW1T1相关器件

型号	品牌	获取价格	描述	数据表
LMUN5232DW1T1G	LRC	获取价格	Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias R
LMUN5232DW1T1G_15	LRC	获取价格	Dual Bias ResistorTransistors
LMUN5232T1	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5232T1G	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5232T3G	LEIDITECH	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5233DW1T1	LRC	获取价格	Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias R
LMUN5233DW1T1G	LRC	获取价格	Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias R
LMUN5233DW1T1G_15	LRC	获取价格	Dual Bias ResistorTransistors
LMUN5233T1	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto
LMUN5233T1G	LRC	获取价格	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto

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