Datasheet > LMUN5213T1

LMUN5213T1

更新时间： 2024-01-28 23:01:30

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
10页	131K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LMUN5213T1 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.78
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.31 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5213T1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

LMUN5211T1

SERIES

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network con-

sisting of two resistors; a series base resistor and a base–emitter resistor.

The BRT eliminates these individual components by integrating them into a

single device. The use of a BRT can reduce both system cost and board

space. The device is housed in the SC–70/SOT–323 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC-70 / SOT-323

PIN 3

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

• Reduces Board Space

• Reduces Component Count

• The SC–70/SOT–323 package can be soldered using wave or

reflow. The modified gull–winged leads absorb thermal stress

during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

MARKINGDIAGRAM

Use the Device Number to order the 7 inch/3000 unit reel.

• Pb-Free package is available

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2

of this data sheet.

8x = Specific Device Code

x = (See Marking Table)

M= Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

P_D

202 (Note 1.)

310 (Note 2.)

1.6 (Note 1.)

2.5 (Note 2.)

T = 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

R_θJA

R_θJL

618 (Note 1.)

403 (Note 2.)

Thermal Resistance –

Junction-to-Lead

280 (Note 1.)

332 (Note 2.)

Junction and Storage

Temperature Range

T_J,T_stg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5211T1 Series–1/10

12 3 4 5 6 7...10

下载PDF

与LMUN5213T1相关器件

型号	品牌	描述	获取价格	数据表
LMUN5213T1G	LRC	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto	获取价格
LMUN5213T3G	LEIDITECH	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto	获取价格
LMUN5214DW1T1	LRC	Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias R	获取价格
LMUN5214DW1T1G	LRC	Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias R	获取价格
LMUN5214DW1T1G_15	LRC	Dual Bias ResistorTransistors	获取价格
LMUN5214T1	LRC	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resisto	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

LMUN5213T1

LMUN5213T1 技术参数

LMUN5213T1 数据手册

与LMUN5213T1相关器件

与LMUN5213T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LMUN5213T1

LMUN5213T1 技术参数

LMUN5213T1 数据手册

与LMUN5213T1相关器件

与LMUN5213T1相关文章

您还可以找

您在本页遇到什么问题？