Datasheet > LMUN5115DW1T1G

LMUN5115DW1T1G

更新时间： 2024-01-14 16:05:41

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
12页	348K
描述
Dual Bias Resistor Transistors

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LMUN5115DW1T1G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	160
元件数量：	2	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.385 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5115DW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

LMUN5111DW1T1G

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which

is ideal for low–power surface mount applications where board space is at a premium.

. Simplifies Circuit Design

. Reduces Board Space

. Reduces Component Count

SC-88/SOT-363

. Available in 8 mm, 7 inch/3000 Unit Tape and Reel

. We declare that the material of product compliance with RoHS requirements.

Ordering Information

Device

Package

Shipping

LMUN51XXDW1T1G

SC-88

3000/Tape&Reel

R₁

10000/Tape&Reel

R₂

LMUN51XXDW1T3G

SC-88

Q₂

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₂

Q₁

Rating

Symbol Value

Unit

Vdc

R₁

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

–50

–100 mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

xx = Device Marking

= (See Page 2)

Thermal Resistance –

Junction-to-Ambient

R _θJA

DEVICE MARKING

INFORMATION

See specific marking information in

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/12

12 3 4 5 6 7...12

中文翻译

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