LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
LMUN5111T1G
SERIES
with Monolithic Bias Resistor Network
PNP SILICON
BIAS RESISTOR
TRANSISTORS
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
3
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
PIN 2
COLLECTOR
(OUTPUT)
R1
R2
PIN 1
• Simplifies Circuit Design
BASE
(INPUT)
PIN 3
EMITTER
• Reduces Board Space
(GROUND)
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MARKINGDIAGRAM
• We declare that the material of product compliance with RoHS requirements.
6X
M
Ordering Information
Device
Package
Shipping
6 X
X
=Specific Device Code
=(See Marking Table)
=Date Code
LMUN51XXT1G
SOT323
3000/Tape&Reel
M
LMUN51XXT3G
SOT323
10000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
VCBO
Value
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCEO
50
Vdc
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
P
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
mW
D
Derate above 25°C
°C/W
°C/W
°C/W
°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
RθJA
RθJL
Junction and Storage
Temperature Range
TJ,Tstg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
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