Datasheet > LMUN5113T1G

LMUN5113T1G

更新时间： 2024-01-11 07:26:48

品牌	Logo	应用领域
乐山 - LRC		晶体管
页数	文件大小	规格书
12页	174K
描述
Bias Resistor Transistor

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LMUN5113T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.73
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.31 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5113T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

LMUN5111T1G

SERIES

with Monolithic Bias Resistor Network

PNP SILICON

BIAS RESISTOR

TRANSISTORS

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system cost

and board space. The device is housed in the SC–70/SOT–323 package

which is designed for low power surface mount applications.

CASE 419, STYLE 3

SOT–323 (SC–70)

PIN 2

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

• Simplifies Circuit Design

BASE

(INPUT)

PIN 3

EMITTER

• Reduces Board Space

(GROUND)

• Reduces Component Count

• The SC–70/SOT–323 package can be soldered using wave or reflow.

The modified gull–winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

MARKINGDIAGRAM

• We declare that the material of product compliance with RoHS requirements.

Ordering Information

Device

Package

Shipping

6 X

=Specific Device Code

=(See Marking Table)

=Date Code

LMUN51XXT1G

SOT323

3000/Tape&Reel

LMUN51XXT3G

SOT323

10000/Tape&Reel

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

202 (Note 1)

310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)

618 (Note 1)

403 (Note 2)

280 (Note 1)

332 (Note 2)

–55 to +150

Derate above 25°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R_θJA

R_θJL

Junction and Storage

Temperature Range

T_J,T_stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/12

12 3 4 5 6 7...12

中文翻译

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与LMUN5113T1G相关器件

型号	品牌	获取价格	描述	数据表
LMUN5114DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias
LMUN5114DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5114DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5114T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5115DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias
LMUN5115DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5115DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5115T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5116DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias
LMUN5116DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors

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