Datasheet > LMUN5112DW1T1G_15

LMUN5112DW1T1G_15

更新时间： 2024-02-29 10:31:24

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
12页	352K
描述
Dual Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LMUN5112DW1T1G_15 数据手册

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第2页

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第3页

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第4页

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第5页

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第6页

浏览型号LMUN5112DW1T1G_15的Datasheet PDF文件第7页

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

LMUN5111DW1T1G

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which

is ideal for low–power surface mount applications where board space is at a premium.

. Simplifies Circuit Design

. Reduces Board Space

. Reduces Component Count

SC-88/SOT-363

. Available in 8 mm, 7 inch/3000 Unit Tape and Reel

. We declare that the material of product compliance with RoHS requirements.

Ordering Information

Device

Package

Shipping

LMUN51XXDW1T1G

SC-88

3000/Tape&Reel

R₁

10000/Tape&Reel

R₂

LMUN51XXDW1T3G

SC-88

Q₂

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₂

Q₁

Rating

Symbol Value

Unit

Vdc

R₁

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

–50

–100 mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

xx = Device Marking

= (See Page 2)

Thermal Resistance –

Junction-to-Ambient

R _θJA

DEVICE MARKING

INFORMATION

See specific marking information in

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/12

12 3 4 5 6 7...12

中文翻译

下载PDF

与LMUN5112DW1T1G_15相关器件

型号	品牌	获取价格	描述	数据表
LMUN5112T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5113DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias
LMUN5113DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5113DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5113T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5114DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias
LMUN5114DW1T1G	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5114DW1T1G_15	LRC	获取价格	Dual Bias Resistor Transistors
LMUN5114T1G	LRC	获取价格	Bias Resistor Transistor
LMUN5115DW1T1	LRC	获取价格	Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias

与LMUN5112DW1T1G_15相关文章

NTE1856手册解读：产品描、产品特性
2024-07-19

6
74HCT377资料手册解读：产品特性、引脚信息、参数分析
2024-07-19

5
GSS4511手册快速解读：产品特性、参数分析
2024-07-19

6
STM32F1038资料手册解读：产品特性、引脚信息、数据参数
2024-07-19

7

产品中心

服务支持

精选活动

关于我们

帮助中心

LMUN5112DW1T1G_15

LMUN5112DW1T1G_15 数据手册

与LMUN5112DW1T1G_15相关器件

与LMUN5112DW1T1G_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LMUN5112DW1T1G_15

LMUN5112DW1T1G_15 数据手册

与LMUN5112DW1T1G_15相关器件

与LMUN5112DW1T1G_15相关文章

您还可以找

您在本页遇到什么问题？