Datasheet > LMUN2112LT3

LMUN2112LT3

更新时间： 2024-02-08 19:54:36

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
8页	228K
描述
Bias Resistor Transistors

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技术参数
数据手册

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LMUN2112LT3 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	60
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.4 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN2112LT3 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

LMUN2111LT1

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

SERIES

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

SOT-23

PIN 3

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

• The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

MARKINGDIAGRAM

• Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

A6x

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

A6x = Device Marking

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

= A – L(See Page 2)

= Date Code

Vdc

DEVICE MARKING

100

mAdc

INFORMATION

See specific marking information in

THERMAL CHARACTERISTICS

Characteristic

the device marking table on page 2 of this

Symbol

Max

Unit

data sheet.

Total Device Dissipation

T_A= 25°C

Derate above 25°C

P_D

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

R_θJA

508 (Note 1.)

311 (Note 2.)

Thermal Resistance –

Junction-to-Lead

R_θJL

174 (Note 1.)

208 (Note 2.)

Junction and Storage

Temperature Range

T_J, T

–55 to +150

stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN2111 1/8

12 3 4 5 6 7 8

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