Datasheet > LMT8N25D

LMT8N25D

更新时间： 2024-02-13 06:13:49

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
9页	2138K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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LMT8N25D 数据手册

LMT8N25D

N-Channel Enhancement Mode Power MOSFET

FEATURES



Fast switching

 100% avalanche tested

 Improved dv/dt capability

APPLICATIONS

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

Device Marking and Package Information

Device

Package

TO-220F

TO-220

TO-251

TO-252

Marking

LMT8N25F

LMT8N25P

LMT8N25U

LMT8N25D

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Value

Parameter

Symbol

Unit

TO-220 TO-220F TO-251

TO-252

Drain-Source Voltage (V_GS= 0V)

Continuous Drain Current

Pulsed Drain Current

V_DSS

I_D

250

(note1)

I_DM

Gate-Source Voltage

V_GSS

E_AS

I_AS

±30

218

6.6

130

Single Pulse Avalanche Energy

Avalanche Current

(note2)

(note1)

Repetitive Avalanche Energy

Power Dissipation (T_C= 25ºC)

E_AR

P_D

ºC

-55~+150

Operating Junction and Storage Temperature Range

T_J, T_stg

Thermal Resistance

Value

TO-251

Parameter

Symbol

Unit

TO-220

2.3

TO-252 TO-220F

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R_thJC

R_thJA

1.5

K/W

62.5

1/9

Rev :01.06.2018

www.leiditech.com

12 3 4 5 6 7...9

中文翻译

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