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LMP2012WGLQMLV

更新时间： 2024-11-23 11:11:51
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器
页数 文件大小 规格书
13页 187K
描述
双路、高精度、轨到轨输出运算放大器 | NAC | 10 | -55 to 125

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LMP2012WGLQMLV 技术参数

生命周期：Active零件包装代码：SOIC
包装说明：CERAMIC, SOIC-10针数：10
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.56
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.000003 µA
最小共模抑制比：95 dB标称共模抑制比：130 dB
频率补偿：YES最大输入失调电压：36 µV
JESD-30 代码：R-CDSO-G10JESD-609代码：e0
长度：6.858 mm低-偏置：YES
低-失调：YES微功率：NO
湿度敏感等级：1功能数量：2
端子数量：10最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：SOP封装等效代码：SOP10,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：2.7/5 V可编程功率：NO
认证状态：Not Qualified筛选级别：38535V;38534K;883S
座面最大高度：2.34 mm标称压摆率：4 V/us
子类别：Operational Amplifier最大压摆率：1.2 mA
供电电压上限：5.8 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：MILITARY端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：50k Rad(Si) V标称均一增益带宽：3000 kHz
最小电压增益：17780宽带：NO
宽度：6.121 mmBase Number Matches：1

LMP2012WGLQMLV 数据手册

 浏览型号LMP2012WGLQMLV的Datasheet PDF文件第2页浏览型号LMP2012WGLQMLV的Datasheet PDF文件第3页浏览型号LMP2012WGLQMLV的Datasheet PDF文件第4页浏览型号LMP2012WGLQMLV的Datasheet PDF文件第5页浏览型号LMP2012WGLQMLV的Datasheet PDF文件第6页浏览型号LMP2012WGLQMLV的Datasheet PDF文件第7页 
LMP2012QML  
www.ti.com  
SNOSAU5H –MARCH 2007–REVISED APRIL 2013  
LMP2012QML Dual High Precision, Rail-to-Rail Output Operational Amplifier  
1
FEATURES  
DESCRIPTION  
The LMP2012 offers unprecedented accuracy and  
stability. This device utilizes patented techniques to  
measure and continually correct the input offset error  
voltage. The result is an amplifier which is ultra stable  
over time and temperature. It has excellent CMRR  
and PSRR ratings, and does not exhibit the familiar  
1/f voltage and current noise increase that plagues  
traditional amplifiers. The combination of the  
LMP2012 characteristics makes it a good choice for  
transducer amplifiers, high gain configurations, ADC  
buffer amplifiers, DAC I-V conversion, and any other  
2.7V-5V application requiring precision and long term  
stability.  
2
•
Total Ionizing Dose 50 krad(Si)  
ELDRS Free 50 krad(Si)  
•
•
TCVIO Temperature Sensitivity (Typical) 0.015  
µV/°C  
(For VS = 5V, Typical Unless Otherwise Noted)  
Low Ensured VIO over Temperature 60 µV  
Low Noise with no 1/f 35nV/√Hz  
High CMRR 90 dB  
•
•
•
•
•
•
•
•
•
High PSRR 90 dB  
High AVOL 85 dB  
Wide Gain-Bandwidth Product 3MHz  
High Slew Rate 4V/µs  
Other useful benefits of the LMP2012 are rail-rail  
output, low supply current of 930 μA, and wide gain-  
bandwidth product of 3 MHz. These extremely  
versatile features found in the LMP2012 provide high  
performance and ease of use.  
Rail-to-Rail Output 30mV  
No External Capacitors Required  
The QMLV version of the LMP2012 has been rated to  
tolerate a total dose level of 50krad/(Si) radiation by  
test method 1019 of MIL-STD-883.  
APPLICATIONS  
•
•
•
•
•
•
•
Attitude and Orbital Controls  
Static Earth Sensing  
Sun Sensors  
Inertial Sensors  
Pressure Sensors  
Gyroscopes  
Earth Observation Systems  
Connection Diagram  
OUT A  
IN A-  
IN A+  
V-  
1
2
3
4
5
10  
9
V+  
OUT B  
IN B-  
8
IN B+  
7
N/C  
6
N/C  
Figure 1. 10-Lead CLGA (Top View)  
See NAC Package  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2013, Texas Instruments Incorporated  
1234567...13

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