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LMP2012WG-QMLV PDF预览

LMP2012WG-QMLV

更新时间: 2024-11-04 05:42:27
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器放大器电路
页数 文件大小 规格书
12页 327K
描述
Dual High Precision, Rail-to-Rail Output Operational Amplifier

LMP2012WG-QMLV 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:CERAMIC, SOIC-10
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.16放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000003 µA
标称共模抑制比:130 dB频率补偿:YES
最大输入失调电压:60 µVJESD-30 代码:R-CDSO-G10
JESD-609代码:e0低-偏置:YES
低-失调:YES微功率:NO
湿度敏感等级:1功能数量:2
端子数量:10最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:SOP封装等效代码:SOP10,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260功率:NO
电源:2.7/5 V可编程功率:NO
认证状态:Not Qualified筛选级别:38535V;38534K;883S
座面最大高度:2.042 mm标称压摆率:4 V/us
子类别:Operational Amplifiers最大压摆率:3.5 mA
供电电压上限:5.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn63Pb37)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
标称均一增益带宽:3000 kHz最小电压增益:17780
宽带:NO宽度:6.12 mm
Base Number Matches:1

LMP2012WG-QMLV 数据手册

 浏览型号LMP2012WG-QMLV的Datasheet PDF文件第2页浏览型号LMP2012WG-QMLV的Datasheet PDF文件第3页浏览型号LMP2012WG-QMLV的Datasheet PDF文件第4页浏览型号LMP2012WG-QMLV的Datasheet PDF文件第5页浏览型号LMP2012WG-QMLV的Datasheet PDF文件第6页浏览型号LMP2012WG-QMLV的Datasheet PDF文件第7页 
October 20, 2008  
LMP2012QML  
Dual High Precision, Rail-to-Rail Output Operational  
Amplifier  
General Description  
Features  
The LMP2012 is the first member of National's QML certified  
new LMP™ precision amplifier family. The LMP2012 offers  
unprecedented accuracy and stability. This device utilizes  
patented techniques to measure and continually correct the  
input offset error voltage. The result is an amplifier which is  
ultra stable over time and temperature. It has excellent CMRR  
and PSRR ratings, and does not exhibit the familiar 1/f voltage  
and current noise increase that plagues traditional amplifiers.  
The combination of the LMP2012 characteristics makes it a  
good choice for transducer amplifiers, high gain configura-  
tions, ADC buffer amplifiers, DAC I-V conversion, and any  
other 2.7V-5V application requiring precision and long term  
stability.  
Available with radiation quarantee  
(For VS = 5V, Typical unless otherwise noted)  
Low guaranteed VIO over temperature  
Low noise with no 1/f  
High CMRR  
High PSRR  
High AVOL  
Wide gain-bandwidth product  
High slew rate  
Rail-to-rail output  
60 µV  
35nV/  
90 dB  
90 dB  
85 dB  
3MHz  
4V/µs  
30mV  
No external capacitors required  
Other useful benefits of the LMP2012 are rail-rail output, low  
supply current of 930 μA, and wide gain-bandwidth product of  
3 MHz. These extremely versatile features found in the  
LMP2012 provide high performance and ease of use.  
Applications  
Attitude and Orbital Controls  
Static Earth Sensing  
Sun Sensors  
The QMLV version of the LMP2012 has been rated to tolerate  
a total dose level of 50krad/(Si) radiation by test method 1019  
of MIL-STD-883.  
Inertial Sensors  
Pressure Sensors  
Gyroscopes  
Earth Observation Systems  
Ordering Information  
NS Part Number  
SMD Part Number  
5962-0620601VZA  
NS Package Number  
WG10A  
Package Discription  
LMP2012WG-QMLV  
LMP2012WGLQMLV  
10LD CERAMIC SOIC  
10LD CERAMIC SOIC  
5962L0620601VZA  
50K rd(Si)  
WG10A  
Connection Diagram  
10LD Ceramic SOIC  
20182202  
Top View  
See NS Package Number WG10A  
© 2008 National Semiconductor Corporation  
201822  
www.national.com  

LMP2012WG-QMLV 替代型号

型号 品牌 替代类型 描述 数据表
LMP2012WG-QMLV TI

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