Datasheet > LMP2012 MDR

LMP2012 MDR

更新时间： 2024-11-05 11:11:51

品牌	Logo	应用领域
德州仪器 - TI		放大器运算放大器
页数	文件大小	规格书
13页	187K
描述
双路、高精度、轨到轨输出运算放大器 \| Y \| 0 \| -55 to 125

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LMP2012 MDR 数据手册

LMP2012QML

www.ti.com

SNOSAU5H –MARCH 2007–REVISED APRIL 2013

LMP2012QML Dual High Precision, Rail-to-Rail Output Operational Amplifier

FEATURES

DESCRIPTION

The LMP2012 offers unprecedented accuracy and

stability. This device utilizes patented techniques to

measure and continually correct the input offset error

voltage. The result is an amplifier which is ultra stable

over time and temperature. It has excellent CMRR

and PSRR ratings, and does not exhibit the familiar

1/f voltage and current noise increase that plagues

traditional amplifiers. The combination of the

LMP2012 characteristics makes it a good choice for

transducer amplifiers, high gain configurations, ADC

buffer amplifiers, DAC I-V conversion, and any other

2.7V-5V application requiring precision and long term

stability.

•

Total Ionizing Dose 50 krad(Si)

ELDRS Free 50 krad(Si)

•

TCV_IOTemperature Sensitivity (Typical) 0.015

µV/°C

(For V_S= 5V, Typical Unless Otherwise Noted)

Low Ensured V_IOover Temperature 60 µV

Low Noise with no 1/f 35nV/√Hz

High CMRR 90 dB

•

High PSRR 90 dB

High A_VOL85 dB

Wide Gain-Bandwidth Product 3MHz

High Slew Rate 4V/µs

Other useful benefits of the LMP2012 are rail-rail

output, low supply current of 930 μA, and wide gain-

bandwidth product of 3 MHz. These extremely

versatile features found in the LMP2012 provide high

performance and ease of use.

Rail-to-Rail Output 30mV

No External Capacitors Required

The QMLV version of the LMP2012 has been rated to

tolerate a total dose level of 50krad/(Si) radiation by

test method 1019 of MIL-STD-883.

APPLICATIONS

•

Attitude and Orbital Controls

Static Earth Sensing

Sun Sensors

Inertial Sensors

Pressure Sensors

Gyroscopes

Earth Observation Systems

Connection Diagram

OUT A

IN A^-

IN A⁺

V^-

V⁺

OUT B

IN B^-

IN B⁺

N/C

Figure 1. 10-Lead CLGA (Top View)

See NAC Package

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...13

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与LMP2012 MDR相关器件

型号	品牌	获取价格	描述	数据表
LMP2012MA	NSC	获取价格	High Precision, Rail-to-Rail Output Operational Amplifier
LMP2012MA	TI	获取价格	Dual High Precision, Rail-to-Rail Output Operational Amplifier
LMP2012MA/NOPB	TI	获取价格	双路、高精度、轨到轨输出运算放大器 \| D \| 8 \| -40 to 125
LMP2012MAX	NSC	获取价格	High Precision, Rail-to-Rail Output Operational Amplifier
LMP2012MAX	TI	获取价格	Dual High Precision, Rail-to-Rail Output Operational Amplifier
LMP2012MAX/NOPB	TI	获取价格	双路、高精度、轨到轨输出运算放大器 \| D \| 8 \| -40 to 125
LMP2012MDE	TI	获取价格	IC,OP-AMP,DUAL,CMOS, RAD HARD,DIE
LMP2012MDR	TI	获取价格	Operational Amplifier
LMP2012MM	NSC	获取价格	High Precision, Rail-to-Rail Output Operational Amplifier
LMP2012MM	TI	获取价格	Dual High Precision, Rail-to-Rail Output Operational Amplifier

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