LMH6715QML
www.ti.com
SNOSAQ3B –NOVEMBER 2010–REVISED MAY 2013
LMH6715QML Dual Wideband Video Op Amp
Check for Samples: LMH6715QML
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FEATURES
DESCRIPTION
The LMH6715 combines Texas Instrument's VIP10™
high speed complementary bipolar process with
Texas Instrument's current feedback topology to
produce a very high speed dual op amp. The
LMH6715 provides 400MHz small signal bandwidth at
a gain of +2V/V and 1300V/μs slew rate while
consuming only 5.8mA per amplifier from ±5V
supplies.
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Available with Radiation Ensured 300 krad(Si)
TA = 25°C, RL = 100Ω, Typical Values Unless
Specified.
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Very Low Diff. Gain, Phase: 0.02%, 0.02°
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Wide Bandwidth: 480MHz (AV = +1V/V);
400MHz (AV = +2V/V)
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0.1dB Gain Flatness to 100MHz
Low Power: 5.8mA/Channel
The LMH6715 offers exceptional video performance
with its 0.02% and 0.02° differential gain and phase
errors for NTSC and PAL video signals while driving
up to four back terminated 75Ω loads. The LMH6715
also offers a flat gain response of 0.1dB to 100MHz
and very low channel-to-channel crosstalk of −70dB
at 10MHz. Additionally, each amplifier can deliver
70mA of output current. This level of performance
makes the LMH6715 an ideal dual op amp for high
density, broadcast quality video systems.
−70dB Channel-to-Channel Crosstalk (10MHz)
Fast Slew Rate: 1300V/μs
Unity Gain Stable
Improved Replacement for CLC412
APPLICATIONS
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HDTV, NTSC & PAL Video Systems
Video Switching and Distribution
IQ Amplifiers
The LMH6715's two very well matched amplifiers
support a number of applications such as differential
line drivers and receivers. In addition, the LMH6715
is well suited for Sallen Key active filters in
applications such as anti-aliasing filters for high
speed A/D converters. Its low power requirement, low
noise and distortion allow the LMH6715 to serve
portable RF applications such as IQ channels.
Wideband Active Filters
Cable Drivers
DC Coupled Single-to-Differential Conversions
Connection Diagram
Top View
Figure 1. 8 Lead CDIP Package
See Package Number NAB0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
VIP10 is a trademark of Texas Instruments.
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All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2013, Texas Instruments Incorporated
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