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LMH6559MFX/NOPB PDF预览

LMH6559MFX/NOPB

更新时间: 2024-02-09 05:56:29
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
40页 1699K
描述
1750MHz 高速闭环缓冲器 | DBV | 5 | -40 to 85

LMH6559MFX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.14放大器类型:BUFFER
最大平均偏置电流 (IIB):14 µA标称带宽 (3dB):1050 MHz
最大输入失调电压:25000 µVJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2.92 mm
湿度敏感等级:1负供电电压上限:-6.5 V
标称负供电电压 (Vsup):-5 V功能数量:1
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C最小输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.22 mm标称压摆率:4580 V/us
子类别:Buffer Amplifier最大压摆率:14 mA
供电电压上限:6.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mm

LMH6559MFX/NOPB 数据手册

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LMH6559  
www.ti.com  
SNOSA57C APRIL 2003REVISED MARCH 2013  
LMH6559 High-Speed, Closed-Loop Buffer  
Check for Samples: LMH6559  
1
FEATURES  
DESCRIPTION  
The LMH6559 is a high-speed, closed-loop buffer  
designed for applications requiring the processing of  
very high frequency signals. While offering a small  
signal bandwidth of 1750MHz, and an ultra high slew  
rate of 4580V/μs the LMH6559 consumes only 10mA  
of quiescent current. Total harmonic distortion into a  
load of 100at 20MHz is 52dBc. The LMH6559 is  
configured internally for a loop gain of one. Input  
resistance is 200kand output resistance is but  
1.2. These characteristics make the LMH6559 an  
ideal choice for the distribution of high frequency  
signals on printed circuit boards. Differential gain and  
phase specifications of 0.06% and 0.02° respectively  
at 3.58MHz make the LMH6559 well suited for the  
buffering of video signals.  
2
Closed-Loop Buffer  
1750MHz Small Signal Bandwidth  
4580V/μs Slew Rate  
0.06% / 0.02° Differential Gain/Phase  
52dBc THD at 20MHz  
Single Supply Operation (3V Min.)  
75mA Output Current  
APPLICATIONS  
Video Switching and Routing  
Test Point Drivers  
High Frequency Active Filters  
Wideband DC Clamping Buffers  
High-Speed Peak Detector Circuits  
Transmission Systems  
The device is fabricated on Texas Instruments' high-  
speed VIP10 process using TI's proven high  
performance circuit architectures.  
Telecommunications  
Test Equipment and Instrumentation  
Typical Schematic  
V
CC  
10nF  
10kW  
1
100nF  
100nF  
50W  
4
8
LMH6559  
5
50W  
10kW  
Figure 1.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2013, Texas Instruments Incorporated  

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