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LMGSF1N02LT1 PDF预览

LMGSF1N02LT1

更新时间: 2024-11-18 03:35:27
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
4页 130K
描述
Power MOSFET 750 mAmps, 20 Volts

LMGSF1N02LT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):0.75 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

LMGSF1N02LT1 数据手册

 浏览型号LMGSF1N02LT1的Datasheet PDF文件第2页浏览型号LMGSF1N02LT1的Datasheet PDF文件第3页浏览型号LMGSF1N02LT1的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
Power MOSFET  
750 mAmps, 20 Volts  
N–Channel SOT–23  
LMGSF1N02LT1  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
3
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc–dc converters and power management in portable  
and battery–powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
1
2
SOT-23  
Low R  
DS(on)  
Provides Higher Efficiency and Extends Battery Life  
Miniature SOT–23 Surface Mount Package Saves Board Space  
N–Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
3
J
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
Vdc  
DSS  
––  
V
GS  
± 20  
1
– Continuous @ T = 25°C  
I
750  
2000  
mA  
A
D
– Pulsed Drain Current (t 10 µs)  
I
p
DM  
2
Total Power Dissipation @ T = 25°C  
P
D
400  
mW  
A
Operating and Storage Temperature  
Range  
T , T  
– 55 to  
150  
°C  
J
stg  
Thermal Resistance – Junction–to–Ambient  
R
300  
260  
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10  
seconds  
T
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–to–Source Breakdown Voltage  
V
20  
Vdc  
(BR)DSS  
(V  
GS  
= 0 Vdc, I = 10 µAdc)  
D
Zero Gate Voltage Drain Current  
I
µAdc  
DSS  
(V  
DS  
(V  
DS  
= 20 Vdc, V  
= 20 Vdc, V  
= 0 Vdc)  
= 0 Vdc, T = 125°C)  
1.0  
10  
GS  
GS  
J
Gate–Body Leakage Current (V  
= ± 20 Vdc, V  
DS  
= 0 Vdc)  
I
±100  
nAdc  
GS  
GSS  
DEVICE MARKING  
LMGSF1N02LT1=N2  
LMGSF1N02LT1-1/4  

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