Datasheet > LMDL301T1G

LMDL301T1G

更新时间： 2024-01-08 06:49:02

品牌	Logo	应用领域
乐山 - LRC		肖特基二极管
页数	文件大小	规格书
3页	135K
描述
Silicon HotâCarrier Diodes Schottky Barrier Diode

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LMDL301T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Hot–Carrier Diodes

Schottky Barrier Diode

LMDL301T1G

These devices are designed primarily for high–efficiency UHF and VHF

detector applications. They are readily adaptable to many other fast switching

RF and digital applications. They are supplied in an inexpensive plastic package

for low–cost, high–volume consumer and industrial/commercial requirements.

They are available in a Surface Mount package.

30 VOLTS SILICON

HOT–CARRIER DETECTOR

AND SWITCHING DIODES

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.5 pF (Max) @ V _R= 15 V

• Low Reverse Leakage – I _R= 13 nAdc (Typ)

• Device Marking: 4T

•

We declare that the material of product

compliance with RoHS requirements.

PLASTIC SOD– 323

CASE 477

CATHODE

ANODE

MAXIMUM RATINGS ( T _J=125°C unless otherwise noted )

Symbol

Rating

Value

Unit

V _R

Reverse Voltage

Volts

THERMAL CHARACTERISTICS

Symbol

Characteristic

Max

Unit

P _D

Total Device Dissipation FR–5 Board,*

T _A= 25°C

200

Derate above 25°C

1.57

635

mW/°C

°C/W

R _θJA

Thermal Resistance Junction to Ambient

Junction and Storage

T _J, T _stg

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ORDERING INFORMATION

Device

Marking

Shipping

LMDL301T1G

3000 / Tape & Reel

LMDL301T3G

10000 / Tape & Reel

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I _R= 10 µA)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Volts

Diode Capacitance

C _T

I _R

nAdc

Vdc

(V _R= 15 V, f = 1.0MHz) Figure 1

Reverse Leakage

(V _R= 25 V) Figure 3

Forward Voltage

(I _F= 1.0 mAdc) Figure 4

Forward Voltage

(I _F= 10 mAdc) Figure 4

—

0.9

1.5

200

0.45

0.6

0.38

0.52

Vdc

Rev.O 1/3

12 3

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