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LMC6681BIN PDF预览

LMC6681BIN

更新时间: 2024-11-25 22:47:03
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器光电二极管
页数 文件大小 规格书
24页 752K
描述
Low Voltage, Rail-To-Rail Input and Output CMOS

LMC6681BIN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.84放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK频率补偿:YES
最大输入失调电压:3000 µVJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.8171 mm
低-偏置:YES低-失调:NO
微功率:NO标称负供电电压 (Vsup):
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
功率:NO电源:1.8/10 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:5.08 mm最小摆率:0.55 V/us
标称压摆率:1.2 V/us子类别:Operational Amplifier
最大压摆率:1.8 mA供电电压上限:12 V
标称供电电压 (Vsup):10 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1200 kHz
最小电压增益:10000宽带:NO
宽度:7.62 mmBase Number Matches:1

LMC6681BIN 数据手册

 浏览型号LMC6681BIN的Datasheet PDF文件第2页浏览型号LMC6681BIN的Datasheet PDF文件第3页浏览型号LMC6681BIN的Datasheet PDF文件第4页浏览型号LMC6681BIN的Datasheet PDF文件第5页浏览型号LMC6681BIN的Datasheet PDF文件第6页浏览型号LMC6681BIN的Datasheet PDF文件第7页 
May 1995  
LMC6681 Single/LMC6682 Dual/LMC6684 Quad  
Low Voltage, Rail-To-Rail Input and Output CMOS  
Amplifier with Powerdown  
General Description  
Features  
The LMC6681/2/4 is a high performance operational ampli-  
fier which can operate over a wide range of supply voltages,  
with guaranteed specifications at 1.8V, 2.2V, 3V, 5V, and  
10V.  
(Typical unless otherwise noted)  
n Guaranteed Specs at 1.8V, 2.2V, 3V, 5V, 10V  
n Rail-to-Rail Input Common-Mode Voltage Range  
n Rail-to-Rail Output Swing  
The LMC6681/2/4 provides an input common-mode voltage  
range that exceeds both supplies. The rail-to-rail output  
swing of the amplifier assures maximum dynamic signal  
range. This rail-to-rail performance of the amplifier, com-  
bined with its high open-loop voltage gain makes it unique  
among CMOS rail-to-rail amplifiers. The LMC6681/2/4 is an  
excellent choice for circuits where the common-mode volt-  
age range is a concern.  
=
=
@
(within 10 mV of supply rail, VS 3V and RL 10 k)  
n Powerdown Mode IS OFF 1.5 µA/Amplifier  
(Guaranteed at VS 1.8V, 2.2V, 3V, and 5V)  
=
n Ultra Low Input Current 80 fA  
=
=
n High Voltage Gain (VS 3V, RL 10 k): 120 dB  
n Unity Gain Bandwidth 1.2 MHz  
Applications  
n Battery Operated Circuits  
n Sensor Amplifiers  
The LMC6681/2/4 has a powerdown mode which can be  
controlled externally. In this powerdown mode, the supply  
current decreases from 700 µA per amplifier to less than 1  
µA per amplifier. The LMC6684 has two powerdown options.  
Each of the powerdown pins disables two amplifiers.  
n Portable Communication Devices  
n Medical Instrumentation  
The LMC6681/2/4 has been designed specifically to improve  
system performance in low voltage applications. The ampli-  
fier’s 80 fA input current, 0.5 mV offset voltage, and 82 dB  
CMRR maintain accuracy in battery-powered systems.  
n Battery Monitoring Circuits  
n Level Detectors, Sample-and-Hold Circuits  
Connection Diagrams  
8-Pin DIP/SO  
14-Pin DIP/SO  
DS012042-1  
Top View  
DS012042-2  
Top View  
16-Pin DIP/SO  
DS012042-3  
Top View  
© 1999 National Semiconductor Corporation  
DS012042  
www.national.com  

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