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LMC662CN/NOPB PDF预览

LMC662CN/NOPB

更新时间: 2024-11-26 12:04:47
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23页 1207K
描述
LMC662 CMOS Dual Operational Amplifier

LMC662CN/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.35放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000002 µA
25C 时的最大偏置电流 (IIB):0.000002 µA最小共模抑制比:63 dB
标称共模抑制比:83 dB频率补偿:YES
最大输入失调电流 (IIO):0.000001 µA最大输入失调电压:3000 µV
JESD-30 代码:R-PDIP-T8JESD-609代码:e3
长度:9.817 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:
标称负供电电压 (Vsup):功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
包装方法:TUBE峰值回流温度(摄氏度):NOT APPLICABLE
功率:NO电源:5/15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:5.08 mm最小摆率:0.7 V/us
标称压摆率:1.1 V/us子类别:Operational Amplifier
最大压摆率:1.3 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1400 kHz
最小电压增益:40000宽带:NO
宽度:7.62 mmBase Number Matches:1

LMC662CN/NOPB 数据手册

 浏览型号LMC662CN/NOPB的Datasheet PDF文件第2页浏览型号LMC662CN/NOPB的Datasheet PDF文件第3页浏览型号LMC662CN/NOPB的Datasheet PDF文件第4页浏览型号LMC662CN/NOPB的Datasheet PDF文件第5页浏览型号LMC662CN/NOPB的Datasheet PDF文件第6页浏览型号LMC662CN/NOPB的Datasheet PDF文件第7页 
LMC662  
www.ti.com  
SNOSC51C APRIL 1998REVISED MARCH 2013  
LMC662 CMOS Dual Operational Amplifier  
Check for Samples: LMC662  
1
FEATURES  
DESCRIPTION  
The LMC662 CMOS Dual operational amplifier is  
ideal for operation from a single supply. It operates  
from +5V to +15V and features rail-to-rail output  
swing in addition to an input common-mode range  
that includes ground. Performance limitations that  
have plagued CMOS amplifiers in the past are not a  
problem with this design. Input VOS, drift, and  
broadband noise as well as voltage gain into realistic  
loads (2 kΩ and 600Ω) are all equal to or better than  
widely accepted bipolar equivalents.  
2
Rail-to-Rail Output Swing  
Specified for 2 kΩ and 600Ω Loads  
High Voltage Gain: 126 dB  
Low Input Offset Voltage: 3 mV  
Low Offset Voltage Drift: 1.3 μV/°C  
Ultra Low Input Bias Current: 2 fA  
Input Common-Mode Range Includes V−  
Operating Range from +5V to +15V Supply  
ISS = 400 μA/amplifier; Independent of V+  
Low Distortion: 0.01% at 10 kHz  
Slew Rate: 1.1 V/μs  
This chip is built with TI's advanced Double-Poly  
Silicon-Gate CMOS process.  
See the LMC660 datasheet for a Quad CMOS  
operational amplifier with these same features.  
APPLICATIONS  
High-Impedance Buffer or Preamplifier  
Precision Current-to-Voltage Converter  
Long-Term Integrator  
Sample-and-Hold Circuit  
Peak Detector  
Medical Instrumentation  
Industrial Controls  
Automotive Sensors  
Connection Diagram  
Typical Application  
Figure 1. 8-Pin PDIP, SOIC  
Figure 2. Low-Leakage Sample-and-Hold  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1998–2013, Texas Instruments Incorporated  

LMC662CN/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LMC662CN TI

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