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LMC6084AIM PDF预览

LMC6084AIM

更新时间: 2024-11-23 04:02:03
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器光电二极管
页数 文件大小 规格书
14页 719K
描述
Precision CMOS Quad Operational Amplifier

LMC6084AIM 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:PLASTIC, SOP-14
针数:14Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.11放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000004 µA
25C 时的最大偏置电流 (IIB):0.000004 µA标称共模抑制比:85 dB
频率补偿:YES最大输入失调电压:350000 µV
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:8.65 mm低-偏置:YES
低-失调:YES湿度敏感等级:1
负供电电压上限:标称负供电电压 (Vsup):
功能数量:4端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.6 V/us
标称压摆率:1.5 V/us子类别:Operational Amplifier
最大压摆率:4 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30标称均一增益带宽:1300 kHz
最小电压增益:50000宽度:3.9 mm
Base Number Matches:1

LMC6084AIM 数据手册

 浏览型号LMC6084AIM的Datasheet PDF文件第2页浏览型号LMC6084AIM的Datasheet PDF文件第3页浏览型号LMC6084AIM的Datasheet PDF文件第4页浏览型号LMC6084AIM的Datasheet PDF文件第5页浏览型号LMC6084AIM的Datasheet PDF文件第6页浏览型号LMC6084AIM的Datasheet PDF文件第7页 
August 2000  
LMC6084  
Precision CMOS Quad Operational Amplifier  
General Description  
Features  
The LMC6084 is a precision quad low offset voltage opera-  
tional amplifier, capable of single supply operation. Perfor-  
mance characteristics include ultra low input bias current,  
high voltage gain, rail-to-rail output swing, and an input  
common mode voltage range that includes ground. These  
features, plus its low offset voltage, make the LMC6084  
ideally suited for precision circuit applications.  
(Typical unless otherwise stated)  
n Low offset voltage: 150 µV  
n Operates from 4.5V to 15V single supply  
n Ultra low input bias current: 10 fA  
n Output swing to within 20 mV of supply rail, 100k load  
n Input common-mode range includes V−  
n High voltage gain: 130 dB  
Other applications using the LMC6084 include precision full-  
wave rectifiers, integrators, references, and sample-and-  
hold circuits.  
n Improved latchup immunity  
Applications  
This device is built with National’s advanced Double-Poly  
Silicon-Gate CMOS process.  
n Instrumentation amplifier  
n Photodiode and infrared detector preamplifier  
n Transducer amplifiers  
For designs with more critical power demands, see the  
LMC6064 precision quad micropower operational amplifier.  
n Medical instrumentation  
n D/A converter  
For a single or dual operational amplifier with similar fea-  
tures, see the LMC6081 or LMC6082 respectively.  
n Charge amplifier for piezoelectric transducers  
PATENT PENDING  
Connection Diagrams  
Input Bias Current  
vs Temperature  
14-Pin DIP/SO  
01146720  
01146701  
Top View  
© 2004 National Semiconductor Corporation  
DS011467  
www.national.com  

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