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LMC6082AIM/NOPB PDF预览

LMC6082AIM/NOPB

更新时间: 2024-11-26 19:25:39
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器光电二极管
页数 文件大小 规格书
14页 758K
描述
IC DUAL OP-AMP, 800 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Operational Amplifier

LMC6082AIM/NOPB 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:7.41放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.000004 µA
最小共模抑制比:72 dB频率补偿:YES
最大输入失调电压:800 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
低-偏置:YES低-失调:YES
微功率:NO湿度敏感等级:1
标称负供电电压 (Vsup):功能数量:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:RAIL峰值回流温度(摄氏度):260
功率:NO电源:5/15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.6 V/us
标称压摆率:1.5 V/us子类别:Operational Amplifier
最大压摆率:2 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:1300 kHz
最小电压增益:50000宽带:NO
宽度:3.9 mmBase Number Matches:1

LMC6082AIM/NOPB 数据手册

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August 2000  
LMC6082  
Precision CMOS Dual Operational Amplifier  
General Description  
Features  
The LMC6082 is a precision dual low offset voltage opera-  
tional amplifier, capable of single supply operation. Perfor-  
mance characteristics include ultra low input bias current,  
high voltage gain, rail-to-rail output swing, and an input  
common mode voltage range that includes ground. These  
features, plus its low offset voltage, make the LMC6082  
ideally suited for precision circuit applications.  
(Typical unless otherwise stated)  
n Low offset voltage: 150 µV  
n Operates from 4.5V to 15V single supply  
n Ultra low input bias current: 10 fA  
n Output swing to within 20 mV of supply rail, 100k load  
n Input common-mode range includes V−  
n High voltage gain: 130 dB  
Other applications using the LMC6082 include precision full-  
wave rectifiers, integrators, references, and sample-and-  
hold circuits.  
n Improved latchup immunity  
Applications  
This device is built with National’s advanced Double-Poly  
Silicon-Gate CMOS process.  
n Instrumentation amplifier  
n Photodiode and infrared detector preamplifier  
n Transducer amplifiers  
For designs with more critical power demands, see the  
LMC6062 precision dual micropower operational amplifier.  
n Medical instrumentation  
n D/A converter  
PATENT PENDING  
n Charge amplifier for piezoelectric transducers  
Connection Diagram  
Input Bias Current  
vs Temperature  
8-Pin DIP/SO  
01129701  
01129718  
Top View  
© 2004 National Semiconductor Corporation  
DS011297  
www.national.com  

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