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LMC6081IM/NOPB PDF预览

LMC6081IM/NOPB

更新时间: 2024-09-10 11:13:27
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管运算放大器
页数 文件大小 规格书
24页 1348K
描述
精密 CMOS 单路运算放大器 | D | 8 | -40 to 85

LMC6081IM/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.03放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):1e-7 µA
25C 时的最大偏置电流 (IIB):0.000004 µA最小共模抑制比:66 dB
标称共模抑制比:85 dB频率补偿:YES
最大输入失调电流 (IIO):0.000002 µA最大输入失调电压:350 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:
标称负供电电压 (Vsup):功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
功率:NO电源:5/15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.6 V/us
标称压摆率:1.5 V/us子类别:Operational Amplifier
最大压摆率:0.75 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1300 kHz
最小电压增益:35000宽带:NO
宽度:3.91 mmBase Number Matches:1

LMC6081IM/NOPB 数据手册

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LMC6081  
www.ti.com  
SNOS649C AUGUST 2000REVISED MARCH 2013  
LMC6081 Precision CMOS Single Operational Amplifier  
Check for Samples: LMC6081  
1
FEATURES  
DESCRIPTION  
The LMC6081 is a precision low offset voltage  
operational amplifier, capable of single supply  
operation. Performance characteristics include ultra  
low input bias current, high voltage gain, rail-to-rail  
output swing, and an input common mode voltage  
range that includes ground. These features, plus its  
low offset voltage, make the LMC6081 ideally suited  
for precision circuit applications.  
2
(Typical unless otherwise stated)  
Low offset voltage: 150 μV  
Operates from 4.5V to 15V single supply  
Ultra low input bias current: 10 fA  
Output swing to within 20 mV of supply rail,  
100k load  
Input common-mode range includes V−  
Other applications using the LMC6081 include  
precision full-wave rectifiers, integrators, references,  
and sample-and-hold circuits.  
High voltage gain: 130 dB  
Improved latchup immunity  
This device is built with TI's advanced Double-Poly  
Silicon-Gate CMOS process.  
APPLICATIONS  
Instrumentation amplifier  
For designs with more critical power demands, see  
the LMC6061 precision micropower operational  
amplifier.  
Photodiode and infrared detector preamplifier  
Transducer amplifiers  
Medical instrumentation  
For a dual or quad operational amplifier with similar  
features, see the LMC6082 or LMC6084 respectively.  
D/A converter  
Charge amplifier for piezoelectric transducers  
Connection Diagram  
8-Pin PDIP/SOIC Package - Top View  
Low-Leakage Sample and Hold  
Figure 1. See Package Number P0008E/D0008A  
Figure 2.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  

LMC6081IM/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LMC6081IMX/NOPB TI

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精密 CMOS 单路运算放大器 | D | 8 | -40 to 85

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