Datasheet > LMBTH10WT1G_11

LMBTH10WT1G_11

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	494K
描述
VHF/UHF Transistors RoHS requirements.

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中文翻译

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数据手册

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LMBTH10WT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

VHF/UHF Transistors

Featrues

LMBTH10WT1G

z We declare that the material of product

compliance with RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

LMBTH10WT1G

3000/Tape&Reel

LMBTH10WT3G

10000/Tape&Reel

SC-70/SOT–323

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

COLLECTOR

CEO

V _CBO

V _EBO

3.0

BASE

Collector Current

I _C

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

Symbol

Max

Unit

P_D

150

Derate above 25°C

1.2

mW/°C

Thermal Resistance, Junction to Ambient

833

200

°C/W

θJA

Total Device Dissipation

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

1.6

625

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T _J, T_stg

–55to+150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I _C= 1.0 mAdc, I _B= 0 )

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 100 µAdc , I _E= 0)

—

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc , I _C= 0)

3.0

Collector Cutoff Current

I _CBO

I _EBO

—

100

nAdc

( V _CB= 25Vdc , I _E= 0 )

Emitter Cutoff Current

( V _EB= 2.0Vdc , I _C= 0 )

Rev.O 1/7

12 3 4 5 6 7

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