Datasheet > LMBTH10QLT3G

LMBTH10QLT3G

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
5页	210K
描述
VHF/UHF Transistors RoHS requirements.

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中文翻译

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数据手册

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LMBTH10QLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

VHF/UHF Transistors

compliance with RoHS requirements.

We declare that the material of product

Ordering Information

LMBTH10QLT1G

Device

Marking

3EQ

Shipping

3000/Tape&Reel

LMBTH10QLT1G

10000/Tape&Reel

LMBTH10QLT3G

3EQ

MAXIMUM RATINGS

Rating

Symbol

V _CEO

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

SOT–23

V _CBO

V _EBO

3.0

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

BASE

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

EMITTER

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

°C/W

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

LMBTH10LT1G = 3EQ

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

—

Vdc

(I _C= 1.0 mAdc, I _B= 0 )

Collector–Base Breakdown Voltage

(I _C= 100 µAdc , I _E= 0)

—

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc , I _C= 0)

3.0

Collector Cutoff Current

( V _CB= 25Vdc , I _E= 0 )

Collector Cutoff Current

( V _CB= 30Vdc , I _E= 0 )

I _CBO

—

100

nAdc

uAdc

I _CBO

I _EBO

Emitter Cutoff Current

( V _EB= 2.0Vdc , I _C= 0 )

—

100

nAdc

uAdc

Emitter Cutoff Current

( V _EB= 3.0Vdc , I _C= 0 )

I _EBO

—

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/5

12 3 4 5

中文翻译

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