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LMBTA94LT1G PDF预览

LMBTA94LT1G

更新时间: 2024-10-28 05:42:23
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管局域网
页数 文件大小 规格书
3页 56K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

LMBTA94LT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.75最大集电极电流 (IC):0.15 A
配置:Single最小直流电流增益 (hFE):75
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

LMBTA94LT1G 数据手册

 浏览型号LMBTA94LT1G的Datasheet PDF文件第2页浏览型号LMBTA94LT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
LMBTA94LT1G  
LMBTA94LT1G  
PNP EPITAXIAL PLANAR TRANSISTOR  
3
We declare that the material of product  
compliance with RoHS requirements.  
1
2
Description  
SOT– 23  
The LMBTA94LT1G is designed for application  
that requires high voltage.  
COLLECTOR  
3
Features  
High Breakdown Voltage: VCEO=400(Min.) at IC=1mA  
Complementary to LMBTA94LT1G  
1
BASE  
DEVICE MARKING  
2
LMBTA94LT1G = 4Z  
EMITTER  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 350 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ...................................................................................... -400 V  
VCEO Collector to Emitter Voltage................................................................................... -400 V  
VEBO Emitter to Base Voltage............................................................................................. -6 V  
IC Collector Current ...................................................................................................... -150 mA  
Characteristics (Ta=25 C)  
°
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-100uA, IE=0  
IC=-1mA, IB=0  
IE=-10uA, IC=0  
VCB=-400V, IE=0  
VEB=-6V, IC=0  
VCE=-400V, VBE=0  
IC=-1mA, IB=-0.1mA  
IC=-10mA, IB=-1mA  
IC=-50mA, IB=-5mA  
IC=-10mA, IB=-1mA  
VCE=-10V, IC=-1mA  
VCE=-10V, IC=-10mA  
VCE=-10V, IC=-50mA  
VCE=-10V, IC=-100mA  
VCE=-10V, f=1MHz  
BVCBO  
BVCEO  
BVEBO  
ICBO  
IEBO  
ICES  
*VCE(sat)1  
*VCE(sat)2  
*VCE(sat)3  
*VBE(sat)  
*hFE1  
-400  
-400  
-6  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
-
-
-
V
V
V
nA  
nA  
nA  
mV  
mV  
mV  
mV  
-100  
-100  
-500  
-200  
-300  
-600  
-900  
-
-
50  
75  
60  
20  
-
*hFE2  
*hFE3  
*hFE4  
Cob  
200  
-
-
6
pF  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
1/3  

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