Datasheet > LMBTA92LT1G_11

LMBTA92LT1G_11

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		高压
页数	文件大小	规格书
4页	80K
描述
HighVoltageTransistor PNP Silicon High voltage.

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LMBTA92LT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

High Voltage Transistor

PNP Silicon

LMBTA92LT1G

LMBTA93LT1G

FEATURE

ƽHigh voltage.

ƽFor Telephony or Professional communication equipment applications.

We declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LMBTA92LT1G

LMBTA92LT3G

3000/Tape&Reel

SOT–23

10000/Tape&Reel

3000/Tape&Reel

LMBTA93LT1G

LMBTA93LT3G

10000/Tape&Reel

COLLECTOR

MAXIMUM RATINGS

Value

BASE

Rating

Symbol LMBTA92 LMBTA93 Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CEO

V _CBO

V _EBO

I _C

–300

–200

Vdc

EMITTER

–5.0

–50

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

TA = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

RθJA

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 µs, Duty Cycle

< 2.0%.

Rev.O 1/4

12 3 4

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