Datasheet > LMBTA64LT1G_15

LMBTA64LT1G_15

更新时间： 2024-10-29 01:08:35

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	131K
描述
Darlington Transistors

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数据手册

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LMBTA64LT1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

DarlingtonTransistors

PNP Silicon

We declare that the material of product

compliance with RoHS requirements.

LMBTA63LT1G

LMBTA64LT1G

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–30

Unit

Vdc

CES

CBO

EBO

–30

Vdc

–10

Vdc

Collector Current – Continuous

–500

mAdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

DEVICE MARKING

LMBTA63LT1G = 2U; LMBTA64LT1G = 2V

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR 3

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board,

225

BASE

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

qJA

EMITTER 2

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

qJA

T , T

J stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = –100 µAdc)

–30

–

Vdc

nAdc

(BR)CEO

Collector Cutoff Current (V

= –30 Vdc)

= –10 Vdc)

–100

CBO

Emitter Cutoff Current (V

–

EBO

ON CHARACTERISTICS

(3)

DC Current Gain

(I = –10 mAdc, V

–

= –5.0 Vdc)

LMBTA63LT1G

5,000

10,000

20,000

–

(I = –10 mAdc, V

(I = –100 mAdc, V

LMBTA64LT1G

LMBTA63LT1G

LMBTA64LT1G

= –5.0 Vdc)

Collector–Emitter Saturation Voltage (I = –100 mAdc, I = –0.1 mAdc)

CE(sat)

–

–1.5

–2.0

Vdc

Base–Emitter On Voltage (I = –100 mAdc, V

= –5.0 Vdc)

BE(on)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product (I = –10 mAdc, V

= –5.0 Vdc, f = 100 MHz)

125

–

MHz

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

1/3

12 3

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